人妻少妇精品一区偷拍,综合色就爱涩涩涩综合婷婷,99国产在线精品视频

亚洲日韩中文在线精品第一-国产成人欧美亚洲日韩电影-国产成人不卡av在线观看-欧美精品亚洲日韩aⅴ

? Instrument
　? Instrument
　　? Instrument for Silicon Material
　　? Instrument for CZ&DSS
　　? Instrument for Wafer
　　? Instrument for Solar Cell
　　? Instrument for Module
　　? Instrument for PV Station
　? LED instrument
　? Other instrument
? Consumables
　? Consumables
　? Accessories
? Software
　? Process software
　? System software
　? Application Software
? Intrument exchange
　? Overview
　? Exchange flow
　? Exchange notice
　? Exchange Center
? Maintenance Service
　? PV Equipment Upgrades
　? Auxiliary Equipment Maintenance

Consumables >> Consumables >> GaInP/GaAs/Ge Epitaxial Wafer-30% Triple Junction

                The  unprocessed Epitaxial Wafers of class 30% contain our high-efficiency GaInP/GaAs/Ge based epitaxial layers on a Ge substrate. These epixial wafers can be used for any further processing and customized cell designs.









Design and Mechanical Data
  Substrate Material ：GaInP/GaInAs/Ge on Ge substrate Base Material ：100 mm ±0.20
 Thickness ：145 μm ±15 μm or 175 μm ±15 μm
 Major Flat length ：32.5 mm ±2 mm
 Major Flat orientation：(100) ±2°	
  
 Average Weight ：≤ 93 mg/cm2
 Laser mark label：Alpha-numeric